BSB013NE2LXI

BSB013NE2LXI概述

25V,163A,N沟道功率MOSFET

Description:

With the new OptiMOS™ 25V product family, sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications.

Available in halfbridge configuration power stage 5x6

 

Benefits:

.
Save overall system costs by reducing the number of phases in multiphase converters
.
Reduce power losses and increase efficiency for all load conditions
.
Save space with smallest packages like CanPAK™, S3O8 or system in package solution
.
Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in
BSB013NE2LXI数据文档
型号 品牌 下载
BSB013NE2LXI

Infineon 英飞凌

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BSB028N06NN3GXUMA1

Infineon 英飞凌

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BSB014N04LX3GXUMA1

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BSB008NE2LXXUMA1

Infineon 英飞凌

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BSB056N10NN3GXUMA1

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BSB028N06NN3 G

Infineon 英飞凌

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BSB044N08NN3 G

Infineon 英飞凌

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BSB056N10NN3 G

Infineon 英飞凌

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BSB053N03LP G

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BSB019N03LX G

Infineon 英飞凌

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BSB012N03LX3 G

Infineon 英飞凌

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