STI13005-1

IPAK NPN 400V 3A

Bipolar BJT Transistor NPN 400V 3A 30W Through Hole I-PAK

得捷:
TRANS NPN 400V 3A IPAK

艾睿:
STMicroelectronics brings you the solution to your high-voltage BJT needs with their NPN STI13005-1 general purpose bipolar junction transistor. This bipolar junction transistor&s;s maximum emitter base voltage is 9 V. Its maximum power dissipation is 30000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 9 V.

Chip1Stop:
Trans GP BJT NPN 400V 3A 3-Pin3+Tab TO-251 Tube

DeviceMart:
TRANSISTOR NPN 400V 3A IPAK