JANTX2N5415S

PNP小功率硅晶体管 PNP LOW POWER SILICON TRANSISTOR

This family of 2N5415S and 2N5416S epitaxial planar transistors are military qualified up to a JANS level for high-reliability applications.  These devices are also available in the longer leaded TO-5 and low profile U4 and UA packaging.

艾睿:
Microsemi brings you the solution to your high-voltage BJT needs with their PNP JANTX2N5415S general purpose bipolar junction transistor. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 750 mW. It has a maximum collector emitter voltage of 200 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.