IXFH30N50P

IXYS SEMICONDUCTOR  IXFH30N50P  晶体管, MOSFET, 极性FET, N沟道, 30 A, 500 V, 200 mohm, 10 V, 5 V

通孔 N 通道 500 V 30A（Tc） 460W（Tc） TO-247AD（IXFH）

得捷:
MOSFET N-CH 500V 30A TO247AD

立创商城:
N沟道 500V 30A

e络盟:
晶体管, MOSFET, 极性FET, N沟道, 30 A, 500 V, 0.2 ohm, 10 V, 5 V

艾睿:
Create an effective common drain amplifier using this IXFH30N50P power MOSFET from Ixys Corporation. Its maximum power dissipation is 460000 mW. This N channel MOSFET transistor operates in enhancement mode. This device utilizes hiperfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

Chip1Stop:
Trans MOSFET N-CH 500V 30A 3-Pin3+Tab TO-247AD

Verical:
Trans MOSFET N-CH 500V 30A 3-Pin3+Tab TO-247AD

Newark:
# IXYS SEMICONDUCTOR  IXFH30N50P  MOSFET Transistor, PolarFET, N Channel, 30 A, 500 V, 200 mohm, 10 V, 5 V

Win Source:
MOSFET N-CH 500V 30A TO-247AD