IXFH14N80P

通孔 N 通道 800V 14A（Tc） 400W（Tc） TO-247AD（IXFH）

Make an effective common gate amplifier using this power MOSFET from Ixys Corporation. Its maximum power dissipation is 400000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with hiperfet technology. This N channel MOSFET transistor operates in enhancement mode.

得捷:
MOSFET N-CH 800V 14A TO247AD

立创商城:
N沟道 800V 14A

贸泽:
MOSFET DIODE Id14 BVdass800

艾睿:
Make an effective common gate amplifier using this IXFH14N80P power MOSFET from Ixys Corporation. Its maximum power dissipation is 400000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with hiperfet technology. This N channel MOSFET transistor operates in enhancement mode.

Verical:
Trans MOSFET N-CH 800V 14A 3-Pin3+Tab TO-247AD