IPG20N06S4L26ATMA1

INFINEON  IPG20N06S4L26ATMA1  双路场效应管, MOSFET, 双N沟道, 20 A, 60 V, 0.021 ohm, 10 V, 1.7 V

OptiMOS™ 双电源 MOSFET

欧时:
Infineon OptiMOS 系列 双 Si N沟道 MOSFET IPG20N06S4L26ATMA1, 20 A, Vds=60 V, 8引脚 TDSON封装

得捷:
MOSFET 2N-CH 60V 20A TDSON-8

立创商城:
2个N沟道 60V 20A

贸泽:
MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2

e络盟:
双路场效应管, MOSFET, 双N沟道, 20 A, 60 V, 0.021 ohm, 10 V, 1.7 V

艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies&s; IPG20N06S4L26ATMA1 power MOSFET can provide a solution. Its maximum power dissipation is 33000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with optimos technology.

安富利:
Trans MOSFET N-CH 60V 20A 8-Pin TDSON EP T/R

Verical:
Trans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R

Newark:
# INFINEON  IPG20N06S4L26ATMA1  Dual MOSFET, Dual N Channel, 20 A, 60 V, 0.021 ohm, 10 V, 1.7 V