先进的功率MOSFET Advanced Power MOSFET
Advanced Power MOSFET
BVDSS= 700 V RDSon = 1.8 W ID= 4 A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 mA Max. @ VDS= 700V
Low RDSON : 1.552 WTyp.
立创商城:
N沟道 700V 4A
艾睿:
Trans MOSFET N-CH 700V 4A 3-Pin3+Tab TO-3PF
Win Source:
Advanced Power MOSFET