BSC020N03LSGATMA1

TDSON N-CH 30V 28A

表面贴装型 N 通道 28A（Ta），100A（Tc） 2.5W（Ta），96W（Tc） PG-TDSON-8-1

得捷:
MOSFET N-CH 30V 28A/100A TDSON

欧时:
MOSFET OptiMOS3 30V 100A 2mOhm TDSON8

贸泽:
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3

艾睿:
Amplify electronic signals and switch between them with the help of Infineon Technologies&s; BSC020N03LSGATMA1 power MOSFET. Its maximum power dissipation is 2500 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

安富利:
Trans MOSFET N-CH 30V 28A 8-Pin TDSON T/R

Chip1Stop:
Trans MOSFET N-CH 30V 28A 8-Pin TDSON EP

TME:
Transistor: N-MOSFET; unipolar; 30V; 28A; 96W; PG-TDSON-8

Verical:
Trans MOSFET N-CH 30V 28A 8-Pin TDSON EP T/R

Win Source:
MOSFET N-CH 30V 100A TDSON-8