TSM1N60LCP

TAIWAN SEMICONDUCTOR  TSM1N60LCP  功率场效应管, MOSFET, N沟道, 1 A, 600 V, 10.5 ohm, 10 V, 4 V

General Description

The TSM1N60L is used an advanced termination schemeto provide enhanced voltage-blocking capability without degrading performance over time. In addition, this  advanced  MOSFET is designed to  withstand  high energy  in avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode  with a fast recovery time. Designed for high voltage, highspeed switching applications in power supplies, converters and PWM  motor  controls,  these  devices  are  particularly  well  suited  for  bridge  circuits  where  diode  speed  and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.

Features

● Robust high voltage termination

● Avalanche energy specified

● Diode is characterized for use in bridge circuits

● Source to Drain diode recovery time comparable to a discrete fast recovery diode.

● IDSS and VDSon specified at elevated temperature