BLF888AS

UHF功率LDMOS晶体管 UHF power LDMOS transistor

General description

A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial

applications. The excellent ruggedness of this device makes it ideal for digital and analog

transmitter applications.

Features and benefits

 Excellent ruggedness VSWR 40 : 1 through all phases

 Optimum thermal behavior and reliability, Rthj-c = 0.15 K/W

 High power gain

 High efficiency

 Designed for broadband operation 470 MHz to 860 MHz

 Internal input matching for high gain and optimum broadband operation

 Excellent reliability

 Easy power control

 Compliant to Restriction ofHazardous Substances RoHS Directive 2002/95/EC

Applications

 Communication transmitter applications in the UHF band

 Industrial applications in the UHF band