BSC084P03NS3GATMA1

晶体管, MOSFET, P沟道, -78.6 A, -30 V, 0.0061 ohm, -10 V, -2.5 V

Summary of Features:

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Enhancement mode

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Normal level, logic level or super logic level

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Avalanche rated

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Pb-free lead plating; RoHS compliant

得捷:
MOSFET P-CH 30V 14.9A 8TDSON

欧时:
Infineon MOSFET BSC084P03NS3GATMA1

贸泽:
MOSFET P-Ch -30V -78.6A TDSON-8 OptiMOS P3

e络盟:
晶体管, MOSFET, P沟道, -78.6 A, -30 V, 0.0061 ohm, -10 V, -2.5 V

艾睿:
Use Infineon Technologies&s; BSC084P03NS3GATMA1 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 2500 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology.

安富利:
Trans MOSFET P-CH 30V 14.5A 8-Pin TDSON T/R

TME:
Transistor: P-MOSFET; unipolar; -30V; -78.6A; 69W; PG-TDSON-8

Verical:
Trans MOSFET P-CH 30V 14.5A Automotive 8-Pin TDSON EP T/R

Win Source:
MOSFET P-CH 30V 14.9A 8TDSON / P-Channel 30 V 14.9A Ta, 78.6A Tc 2.5W Ta, 69W Tc Surface Mount PG-TDSON-8-5