XN5601 PNP+NPN复合三极管 -60V/60V -100mA/100mA 160~460 SOT-163/SC-74 标记4N 用于开关/数字电路
集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO | -60V/60V \---|--- 集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO | -50V/50V 集电极连续输出电流IC Collector CurrentIC | -100mA/100mA 截止频率fT Transtion FrequencyfT | 80MHz/150MHz 直流电流增益hFE DC Current GainhFE | 160~460/160~460 管压降VCE（sat） Collector-Emitter Saturation Voltage | -300mA/100mA 耗散功率Pc Power Dissipation | 300mW Description & Applications | Features • Silicon PNP epitaxial planer transistor Tr1 Silicon NPN epitaxial planer transistor Tr2 • Two elements incorporated into one package. • Reduction of the mounting area and assembly cost by one half. Applications • For general amplification 2SB709A+2SD601A 描述与应用 | 特点 •硅外延刨床PNP晶体管（TR1）硅NPN外延刨床晶体管的（TR2） •两个要素纳入一包装。 •减少安装面积和汇编一半的费用。 应用 •对于一般的放大2SB709A+2SD601A