PTFB212503FLV2R0XTMA1

射频金属氧化物半导体场效应RF MOSFET晶体管

Summary of Features:

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Broadband internal input and output matching

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Enhanced for use in DPD error correction systems

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Wide video bandwidth

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Typical single-carrier WCDMA performance at 2170 MHz, 30 V, IDQ = 1.85 A, 3GPP signal, channel bandwidth = 3.84 MHz, PAR = 7.5 dB @ 0.01% CCDF

\- Average output power = 49.4 dBm

\- Linear gain = 18 dB

\- Efficiency = 37%

\- Intermodulation distortion = –33 dBc

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Typical CW performance, 2170 MHz, 30 V

\- Output power at P1dB = 240 W

\- Efficiency = 54 %

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Increased negative gate-source voltage range for improved performance in Doherty peaking amplifiers

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Integrated ESD protection: Human Body Model, Class 2 minimum

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Capable of handling 10:1 VSWR @ 30 V, 240 W CWoutput power

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Pb-free, RoHS-compliant

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Package: H-34288-4/2, earless