VNB35N07TR-E

STMICROELECTRONICS  VNB35N07TR-E  晶体管, MOSFET, N沟道, 18 A, 80 V, 28 mohm, 10 V, 3 V

The is an OMNIFET fully auto-protected Power MOSFET made using VIPower® technology. It is intended for replacement of standard power MOSFETs in DC to 50kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.

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Diagnostic feedback through input pin

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ESD protection

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Direct access to the gate of the power MOSFET analogue driving

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Compatible with standard power MOSFET