ON SEMICONDUCTOR BCW30LT1G 单晶体管 双极, PNP, -32 V, 225 mW, -100 mA, 215 hFE
The versatility of this PNP GP BJT from makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 32 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| BCW30LT1G | ON Semiconductor 安森美 | 下载 |
| BCW33LT3G | ON Semiconductor 安森美 | 下载 |
| BCW33LT1G | ON Semiconductor 安森美 | 下载 |
| BCW33 | Fairchild 飞兆/仙童 | 下载 |
| BCW32LT1G | ON Semiconductor 安森美 | 下载 |
| BCW30,235 | NXP 恩智浦 | 下载 |
| BCW32,235 | NXP 恩智浦 | 下载 |
| BCW30 | Fairchild 飞兆/仙童 | 下载 |
| BCW31 | Fairchild 飞兆/仙童 | 下载 |
| BCW33LT1 | ON Semiconductor 安森美 | 下载 |
| BCW32T116 | ROHM Semiconductor 罗姆半导体 | 下载 |