MWS5114D1

1024字×4位LSI静态RAM 1024-Word x 4-Bit LSI Static RAM

Description

The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS CMOS technology. It is designed for use in memory systems where low power and simplicity in use are desirable. This type has common data input and data output and utilizes a single power supply of 4.5V to 6.5V.

The MWS5114 is supplied in 18 lead, hermetic, dual-in-line sidebrazed ceramic packages D suffix and in 18 lead dual in-line plastic packages E suffix.

Features

• Fully Static Operation

• Industry Standard 1024 x 4 Pinout Same as Pinouts for 6514, 2114, 9114, and 4045 Types

• Common Data Input and Output

• Memory Retention for Standby Battery Voltage as Low as 2V Min

• All Inputs and Outputs Directly TTL Compatible

• Three-State Outputs

• Low Standby and Operating Power