STGD3NB60H 系列 600 V 3 A N 沟道 Power Mesh IGBT - D2PAK
You won"t need to worry about any lagging in your circuit with this IGBT transistor from STMicroelectronics. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 48000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This IGBT transistor has a minimum operating temperature of -65 °C and a maximum of 175 °C. It is made in a single configuration.
| 型号 | 品牌 | 下载 |
|---|---|---|
| STGD3NB60SDT4 | ST Microelectronics 意法半导体 | 下载 |
| STGD18N40LZ-1 | ST Microelectronics 意法半导体 | 下载 |
| STGDL6NC60DT4 | ST Microelectronics 意法半导体 | 下载 |
| STGD8NC60KDT4 | ST Microelectronics 意法半导体 | 下载 |
| STGD10HF60KD | ST Microelectronics 意法半导体 | 下载 |
| STGD3HF60HDT4 | ST Microelectronics 意法半导体 | 下载 |
| STGD19N40LZ | ST Microelectronics 意法半导体 | 下载 |
| STGD10NC60HT4 | ST Microelectronics 意法半导体 | 下载 |
| STGD10NC60ST4 | ST Microelectronics 意法半导体 | 下载 |
| STGD10NC60SDT4 | ST Microelectronics 意法半导体 | 下载 |
| STGD3NB60FT4 | ST Microelectronics 意法半导体 | 下载 |