Trans IGBT Chip N-CH 900V 72A 417000mW 3Pin3+Tab TO-247
Don"t be afraid to step up the amps in your device when using this IGBT transistor from . Its maximum power dissipation is 417000 mW. It has a maximum collector emitter voltage of 900 V. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
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