IPB60R120C7ATMA1

晶体管, MOSFET, N沟道, 19 A, 600 V, 0.103 ohm, 10 V, 3.5 V

Description:

The new 600V CoolMOS

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*™** C7 series from offers a ~50% reduction in turn-off losses E oss compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies.

 

Efficiency and TCO total cost of ownership applications such as hyperdata centers and high efficiency telecom rectifiers >96% benefit from the higher efficiency offered by CoolMOS

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*™** C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS **™** C7 Power MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss.

 

**Technical eLearning available**

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Summary of Features:

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Reduced switching loss parameters such as Q G, C oss, E oss

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Best-in-class figure of merit Q G*R DSon

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Increased switching frequency

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Best R on*A in the world

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Rugged body diode

Benefits:

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Enables increasing switching frequency without loss in efficiency

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Measure showing key parameter for light load and full load efficiency

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Doubling the switching frequency will half the size of magnetic components

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Smaller packages for same R DSon

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Can be used in many more positions for both hard and soft switching topologies

Target Applications:

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Server

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Telecom

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PC power  

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Solar

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Industrial