BFU768F,115

晶体管 双极-射频, NPN, 2.8 V, 110 GHz, 220 mW, 70 mA, 330 hFE

* Low noise high linearity RF transistor * 110 GHz fT silicon germanium technology * Optimal linearity for low current and high gain * Low minimum noise figure of 0.50 dB at 2.4 GHz and 0.74 dB at 5.8 GHz * Low component count Wi-Fi LNA application circuits available for 2.4 GHz ISM bandand 4.9 GHz to 5.9 GHz U-NII band, with optimized RF performance: * Low current: 10.8 mA * Noise figure * Gain: 13.1 dB at 2.4 GHz, 12.2 dB at 5 GHz * High IP3: 15.7 dBm at 2.4 GHz, 18.8 dBm at 5 GHz * Very fast on/off times * Unconditionally stable * Higher IP3, higher gain or lower noise figure possible with different application circuits