IPB200N15N3GATMA1

N-沟道 150 V 50 A 20 mΩ 23 nC OptiMOS 3 功率 晶体管 - D2PAK

OptiMOS™3 功率 MOSFET，100V 及以上

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET IPB200N15N3GATMA1, 50 A, Vds=150 V, 3引脚 D2PAK TO-263封装

得捷:
MOSFET N-CH 150V 50A D2PAK

艾睿:
This IPB200N15N3GATMA1 power MOSFET from Infineon Technologies can be used for amplification in your circuit. Its maximum power dissipation is 150000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device utilizes optimos 3 technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 150V 50A 3-Pin TO-263 T/R

TME:
Transistor: N-MOSFET; unipolar; 120V; 45A; 78W; PG-TO263-3

Verical:
Trans MOSFET N-CH 150V 50A Automotive 3-Pin2+Tab D2PAK T/R