FDC637BNZ

FAIRCHILD SEMICONDUCTOR  FDC637BNZ  晶体管, MOSFET, N沟道, 6.2 A, 20 V, 0.021 ohm, 4.5 V, 800 mV

The is a 2.5V specified N-channel MOSFET produced using Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It is designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages. It is suitable for use in DC-to-DC converter, load switching and battery protection applications.

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Fast switching speed

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High performance Trench technology for extremely low RDS ON

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Manufactured using green packaging material

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Halide-free

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>2kV Typical HBM ESD protection level

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8nC Typical low gate charge