TO-3P N-CH 800V 7A
**Features:**
* FAP-III = Logic Level, High Avalanche Ruggedness
* FAP-IIS = VGS ±35 V, VGSth 4.0 ±0.5 V
* FAP-IIA = Reduced Turn Off Time
* FAP-IIIBH = High Speed Non Logic
* FAP-IIIB = Logic Level, VGSth 1.5 ±0.5 V
* FAP-G = Ultra Fast Switching
* Trench Gate Series = Ultra Low On-Resistance`
Allied Electronics:
MOSFET, Power; N-Ch; VDSS 800V; RDSON 1.62 Ohms; ID +/-7A; TO-3P; PD 125W; VGS +/-35V
Win Source:
N-channel MOS-FET