高速PT IGBT High Speed PT IGBT
This fast-switching IGBT transistor from will be perfect in your circuit. Its maximum power dissipation is 520000 mW. It has a maximum collector emitter voltage of 600 V. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
| 型号 | 品牌 | 下载 |
|---|---|---|
| APT68GA60LD40 | Microsemi 美高森美 | 下载 |
| APT60GT60JR | Microsemi 美高森美 | 下载 |
| APT60DQ60BG | Microsemi 美高森美 | 下载 |
| APT6M100K | Microsemi 美高森美 | 下载 |
| APT60D60BG | Microsemi 美高森美 | 下载 |
| APT60DQ120BG | Microsemi 美高森美 | 下载 |
| APT60DQ100BG | Microsemi 美高森美 | 下载 |
| APT60D40BG | Microsemi 美高森美 | 下载 |
| APT60D20BG | Microsemi 美高森美 | 下载 |
| APT60D60B | Microsemi 美高森美 | 下载 |
| APT60S20BG | Microsemi 美高森美 | 下载 |