RF功率晶体管， LDMOST塑料系列N沟道增强模式横向的MOSFET RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
Used in radio frequency environments, this RF amplifier made from STMicroelectronics is ideal for amplifying and switching between electronic signals. Its maximum power dissipation is 26700 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. Its maximum frequency is 1000 MHz. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has an operating temperature range of -65 °C to 150 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| PD84008L-E | ST Microelectronics 意法半导体 | 下载 |
| PD84006L-E | ST Microelectronics 意法半导体 | 下载 |
| PD84001 | ST Microelectronics 意法半导体 | 下载 |
| PD84006-E | ST Microelectronics 意法半导体 | 下载 |
| PD84002 | ST Microelectronics 意法半导体 | 下载 |
| PD84010S-E | ST Microelectronics 意法半导体 | 下载 |
| PD84008-E | ST Microelectronics 意法半导体 | 下载 |
| PD84010TR-E | ST Microelectronics 意法半导体 | 下载 |
| PD84010-E | ST Microelectronics 意法半导体 | 下载 |
| PD84008S-E | ST Microelectronics 意法半导体 | 下载 |