DMMT5551-7-F

DIODES INC.  DMMT5551-7-F  双极晶体管阵列, NPN, 160 V, 300 mW, 200 mA, 80 hFE, SOT-26

- 双极 BJT - 阵列 2 NPN（双）配对 160V 200mA 300MHz 300mW 表面贴装型 SOT-26

得捷:
TRANS 2NPN 160V 0.2A SOT26

立创商城:
2个NPN 160V 200mA

贸泽:
Bipolar Transistors - BJT MATCHED NPN

e络盟:
双极晶体管阵列, NPN, 160 V, 300 mW, 200 mA, 80 hFE, SOT-26

艾睿:
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN DMMT5551-7-F GP BJT from Diodes Zetex. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 160 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Allied Electronics:
Transistor Dual NPN 160V 0.2A SOT26-6

安富利:
Trans GP BJT NPN 160V 0.2A 6-Pin SOT-26 T/R

Chip1Stop:
Trans GP BJT NPN 160V 0.2A 6-Pin SOT-26 T/R

Verical:
Trans GP BJT NPN 160V 0.2A Automotive 6-Pin SOT-26 T/R

Newark:
# DIODES INC.  DMMT5551-7-F  Bipolar Transistor Array, NPN, 160 V, 300 mW, 200 mA, 80 hFE, SOT-26

儒卓力:
**NPN NPN MATCHED TRAN.160V SOT26 **

Win Source:
TRANS 2NPN 160V 0.2A SOT26

DeviceMart:
TRANS NPN BIPOLAR 300MW SOT26