TOSHIBA GT30J324 单晶体管, IGBT, 30 A, 2.45 V, 170 W, 600 V, TO-3P, 3 引脚
The is a 4th generation N-channel silicon Insulated Gate Bipolar Transistor IGBT for use with high power and fast switching applications.
e络盟:
TOSHIBA GT30J324 单晶体管, IGBT, 30 A, 2.45 V, 170 W, 600 V, TO-3P, 3 引脚
艾睿:
Trans IGBT Chip N-CH 600V 30A 3-Pin3+Tab TO-3PN
Chip1Stop:
Trans IGBT Chip N-CH 600V 30A 3-Pin3+Tab TO-3PN
Win Source:
Insulated Gate Bipolar Transistor Silicon N Channel IGBT
| 型号 | 品牌 | 下载 |
|---|---|---|
| GT30J324 | Toshiba 东芝 | 下载 |
| GT30S-150-150-0.23-0 | T-Global Technology | 下载 |
| GT30-100-100-0.23-0 | T-Global Technology | 下载 |
| GT30J311 | Toshiba 东芝 | 下载 |
| GT3020/L2C-B5670AC2CB2/2T | Everlight Electronics 亿光 | 下载 |
| GT3020/L2C-B2832AC2CB2/2T | Everlight Electronics 亿光 | 下载 |
| GT30-300-300-0.23-0 | T-Global Technology | 下载 |
| GT30S-320-320-0.23-0 | T-Global Technology | 下载 |
| GT30S-640-320-0.23-0 | T-Global Technology | 下载 |
| GT30J324Q | Toshiba 东芝 | 下载 |
| GT30J121Q | Toshiba 东芝 | 下载 |