BSP149H6906XTSA1

INFINEON  BSP149H6906XTSA1  晶体管, MOSFET, N沟道, 660 mA, 200 V, 1 ohm, 10 V, -1.4 V

SIPMOS® N 通道 MOSFET

得捷:
MOSFET N-CH 200V 660MA SOT223-4

欧时:
Infineon BSP149H6906XTSA1

立创商城:
N沟道 200V 660A

艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The BSP149H6906XTSA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 1800 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This device is made with sipmos technology. This N channel MOSFET transistor operates in depletion mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

安富利:
Trans MOSFET N-CH 200V 0.66A 4-Pin SOT-223 T/R

Chip1Stop:
Trans MOSFET N-CH 200V 0.66A Automotive 4-Pin3+Tab SOT-223 T/R

Verical:
Trans MOSFET N-CH 200V 0.66A Automotive 4-Pin3+Tab SOT-223 T/R

Newark:
MOSFET Transistor, N Channel, 660 mA, 200 V, 1 ohm, 10 V, -1.4 V