PC28F00AG18AE

Flash, 64MX16, 96ns, PBGA64, 8 X 10MM, 1.2MM HEIGHT, ROHS COMPLIANT, TBGA-64

General Description

"s 65nm device is the latest generation of StrataFlash® wireless memory featuring flexible, multiple-partition, dual-operation architecture. The device provides high performance, asynchronous read mode and synchronous-burst read mode using 1.8V low-voltage, multilevel cell MLC technology.

Features

• High-Performance Read, Program and Erase

   – 96 ns initial read access

   – 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output

   – 133 MHz with zero wait-state synchronous burst reads: 5.5 ns clock-to-data output

   – 8-, 16-, and continuous-word synchronous-burst Reads

   – Programmable WAIT configuration

   – Customer-configurable output driver impedance

   – Buffered Programming: 2.0 μs/Word typ, 512-Mbit 65 nm

   – Block Erase: 0.9 s per block typ

   – 20 μs typ program/erase suspend

• Architecture

   – 16-bit wide data bus

   – Multi-Level Cell Technology

   – Symmetrically-Blocked Array Architecture

   – 256-Kbyte Erase Blocks

   – 1-Gbit device: Eight 128-Mbit partitions

   – 512-Mbit device: Eight 64-Mbit partitions

   – 256-Mbit device: Eight 32-Mbit partitions

   – 128-Mbit device: Eight 16-Mbit partitions

   – Read-While-Program and Read-While-Erase

   – Status Register for partition/device status

   – Blank Check feature

• Quality and Reliability

   – Expanded temperature: –30 °C to +85 °C

   – Minimum 100,000 erase cycles per block

   – 65nm Process Technology

• Power

   – Core voltage: 1.7 V - 2.0 V

   – I/O voltage: 1.7 V - 2.0 V

   – Standby current: 60 μA typ for 512-Mbit, 65 nm

   – Deep Power-Down mode: 2 μA typ

   – Automatic Power Savings mode

   – 16-word synchronous-burst read current: 23 mA typ @ 108 MHz; 24 mA typ @ 133 MHz

• Software

   – Micron® Flash data integrator FDI optimized

   – Basic command set BCS and extended command set ECS compatible

   – Common Flash interface CFI capable

• Security

   – One-time programmable OTP space

     64 unique factory device identifier bits

     2112 user-programmable OTP bits

   – Absolute write protection: VPP = GND

   – Power-transition erase/program lockout

   – Individual zero latency block locking

   – Individual block lock-down

• Density and packaging

   – 128Mb, 256Mb, 512Mbit, and 1-Gbit

   – Address-data multiplexed and non-multiplexed interfaces

   – 64-Ball Easy BGA