SI7370DP-T1-E3

SI7370DP-T1-E3概述

VISHAY  SI7370DP-T1-E3  晶体管, MOSFET, N沟道, 9.6 A, 60 V, 0.009 ohm, 10 V, 4 V

The is a 60VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for primary side switch and secondary synchronous rectifier applications.

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New low thermal resistance PowerPAK® package with small size and low 1.07mm profile
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PWM optimized
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Fast switching
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100% Rg tested
.
-55 to 150°C Operating temperature range
SI7370DP-T1-E3数据文档
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