MMBT2907ALT3G

ON SEMICONDUCTOR  MMBT2907ALT3G  双极性晶体管, PNP, -60V, SOT-23, 整卷

小信号 PNP ，

### 标准

带 S 或 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。

欧时:
ON Semiconductor MMBT2907ALT3G , PNP 晶体管, 600 mA, Vce=60 V, HFE:50, 100 MHz, 3引脚 SOT-23封装

得捷:
TRANS PNP 60V 0.6A SOT23-3

立创商城:
MMBT2907ALT3G

e络盟:
Bipolar BJT Single Transistor, PNP, -60 V, 200 MHz, 225 mW, -600 mA, 50 hFE

艾睿:
Implement this PNP MMBT2907ALT3G GP BJT from ON Semiconductor to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.

Allied Electronics:
Transistor PNP 60V 600mA SOT23

安富利:
Trans GP BJT PNP 60V 0.6A 3-Pin SOT-23 T/R

Chip1Stop:
Trans GP BJT PNP 60V 0.6A 350mW Automotive 3-Pin SOT-23 T/R

Verical:
Trans GP BJT PNP 60V 0.6A 350mW 3-Pin SOT-23 T/R

Newark:
# ON SEMICONDUCTOR  MMBT2907ALT3G  Bipolar BJT Single Transistor, PNP, 60 V, 200 MHz, 225 mW, -600 mA, 100 hFE

Win Source:
TRANS PNP 60V 0.6A SOT-23

DeviceMart:
TRANS PNP GP 60V 600MA SOT-23