SMMUN2233LT1G

ON SEMICONDUCTOR  SMMUN2233LT1G  晶体管 双极预偏置/数字, 50 V, 100 mA, 4.7 kohm, 47 kohm, 0.1 电阻比率, SOT-23 新

Apply the applications of a traditional bi polar junction transistor, in digital circuits with this NPN digital transistor from , ideal for any digital signal processing circuit! This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 400 mW. It has a maximum collector emitter voltage of 50 V. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It is made in a single configuration. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.