500V N沟道MOSFET 500V N-Channel MOSFET
These N-Channel enhancement mode power field effect transistors are produced using s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
| 型号 | 品牌 | 下载 |
|---|---|---|
| FDA16N50 | Fairchild 飞兆/仙童 | 下载 |
| FDA18N50 | Fairchild 飞兆/仙童 | 下载 |
| FDA16N50LDTU | Fairchild 飞兆/仙童 | 下载 |
| FDA16N50_F109 | Fairchild 飞兆/仙童 | 下载 |
| FDA1254-H-1R2M=P3 | muRata 村田 | 下载 |
| FDA1254-H-1R0M=P3 | muRata 村田 | 下载 |
| FDA1254-H-4R7M=P3 | muRata 村田 | 下载 |
| FDA1254-H-3R3M=P3 | muRata 村田 | 下载 |
| FDA1055-H-2R2M=P3 | muRata 村田 | 下载 |
| FDA16N50-F109 | ON Semiconductor 安森美 | 下载 |
| FDA15N65 | Fairchild 飞兆/仙童 | 下载 |