NOR Flash Parallel 5V 4M-bit 512K x 8/256K x 16 70ns 48Pin TSOP-I
Description
The AT49F004T and AT49F4096AT are 5-volt, 4-megabit Flash Memories orga nized as 524,288 words of 8 bits each or 256K words of 16 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 55 ns with power dissipation of just 275 mW. When deselected, the CMOS standby
current is less than 300 µA.
Features
• Single Voltage Operation
–5V Read
– 5V Programming
• Fast Read Access Time - 55 ns
• Internal Erase/Program Control
• Sector Architecture
– One 8K Words 16K bytes Boot Block with Programming Lockout
– Two 4K Words 8K bytes Parameter Blocks
– One 240K Words 480K bytes Main Memory Array Block
• Fast Sector Erase Time - 10 seconds
• Byte-by-Byte or Word-By-Word Programming - 10 µs Typical
• Hardware Data Protection
• DATAPolling For End Of Program Detection
• Low-Power Dissipation
– 50 mA Active Current
– 300 µA CMOS Standby Current
• Typical 10,000 Write Cycles