双高压Trench MOS势垒肖特基整流器超低VF = 0.50 V在IF = 5 A Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF= 0.50 V at IF= 5 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C for TO-263AB package
• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 for TO-220AB, ITO-220AB and TO-262AA package
• Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
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|---|---|---|
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| VB30100SG-E3/8W | Vishay Semiconductor 威世 | 下载 |
| VB30120S-E3/4W | Vishay Semiconductor 威世 | 下载 |
| VB30100S-E3/4W | Vishay Semiconductor 威世 | 下载 |
| VB30120SG-E3/8W | Vishay Semiconductor 威世 | 下载 |
| VB30100C-E3/8W | Vishay Semiconductor 威世 | 下载 |
| VB30100C-E3/4W | Vishay Semiconductor 威世 | 下载 |