FAIRCHILD SEMICONDUCTOR BSV52.. 射频双极晶体管
集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| 20V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| 12V 集电极连续输出电流ICCollector CurrentIC| 200mA/0.2A 截止频率fTTranstion FrequencyfT| 400MHz 直流电流增益hFEDC Current GainhFE| 40~120 管压降VCE（sat）Collector-Emitter Saturation Voltage| 400mV/0.4V 耗散功率PcPower Dissipation| 225mW/0.225W Description & Applications| NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. 描述与应用| NPN开关 该设备是专为高速饱和开关 集电极电流10 mA至100 mA的。