BCR108SH6327XTSA1

单 P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3

双电阻器双数字，

得捷:
TRANS 2NPN PREBIAS 0.25W SOT363

立创商城:
2个NPN-预偏置 100mA 50V

欧时:
Infineon BCR108SH6327XTSA1 双 NPN 数字晶体管, Vce=50 V, 2.2 kΩ, 电阻比:0.047, 6引脚 SOT-363 SC-88封装

贸泽:
双极晶体管 - 预偏置 AF DIGITAL TRANSISTORS

艾睿:
Infineon Technologies brings you their latest NPN BCR108SH6327XTSA1 digital transistor, a component that can easily provide you with most of the features of traditional BJT&s;s while maintaining a digital form. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 70@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 250 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It is made in a dual configuration. This transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

Chip1Stop:
Trans Digital BJT NPN 50V 100mA Automotive 6-Pin SOT-363 T/R

Verical:
Trans Digital BJT NPN 50V 100mA 250mW Automotive 6-Pin SOT-363 T/R

Win Source:
TRANS 2NPN PREBIAS 0.25W SOT363