Trans IGBT Chip N-CH 600V 160A 360000mW 4Pin SOT-227B
This IGBT transistor from Ixys Corporation is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 360000 mW. It is made in a single dual emitter configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
得捷:
IGBT MOD 600V 160A 360W SOT227B
贸泽:
IGBT Transistors 72 Amps 600V
艾睿:
This IXGN72N60A3 IGBT transistor from Ixys Corporation is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 360000 mW. It is made in a single dual emitter configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
型号 | 品牌 | 下载 |
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IXGN72N60A3 | IXYS Semiconductor | 下载 |
IXGN200N60A2 | IXYS Semiconductor | 下载 |
IXGN200N60B | IXYS Semiconductor | 下载 |
IXGN200N60 | IXYS Semiconductor | 下载 |
IXGN60N60 | IXYS Semiconductor | 下载 |
IXGN40N60CD1 | IXYS Semiconductor | 下载 |
IXGN50N60BD2 | IXYS Semiconductor | 下载 |
IXGN60N60C2D1 | IXYS Semiconductor | 下载 |
IXGN80N60A2 | IXYS Semiconductor | 下载 |
IXGN80N60A2D1 | IXYS Semiconductor | 下载 |
IXGN60N60C2 | IXYS Semiconductor | 下载 |