STW42N60M2-EP

晶体管, MOSFET, N沟道, 34 A, 600 V, 0.076 ohm, 10 V, 3 V

N-Channel 600V 34A Tc 250W Tc Through Hole TO-247

得捷:
MOSFET N-CH 600V 34A TO247

立创商城:
N沟道 600V 34A

贸泽:
MOSFET N-channel 600 V, 0.076 Ohm typ., 34 A MDmesh M2 EP Power MOSFET in a TO-247 package

e络盟:
晶体管, MOSFET, N沟道, 34 A, 600 V, 0.076 ohm, 10 V, 3 V

艾睿:
Create an effective common drain amplifier using this STW42N60M2-EP power MOSFET from STMicroelectronics. Its maximum power dissipation is 250000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with mdmesh m2 technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

TME:
Transistor: N-MOSFET; unipolar; 600V; 22A; 250W; TO247

Verical:
Trans MOSFET N-CH 600V 34A 3-Pin3+Tab TO-247 Tube

Win Source:
MOSFET N-CH 600V 34A TO247 / N-Channel 600 V 34A Tc 250W Tc Through Hole TO-247-3