VSMY98545

VSMY98545概述

VISHAY  VSMY98545  红外发射器, 高功率, 45 °, SMD, 1 A, 2.3 V, 15 ns, 18 ns

The is a 850nm Infrared Emitting Diode based on surface emitter technology with high radiant power and high speed. A 42mil chip provides outstanding low forward voltage and allows DC operation of the device up to 1A. It has the floor life of 168h, MSL 3, according to J-STD-020.

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High reliability
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High radiant power
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High radiant intensity
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Low forward voltage
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Lead Pb-free reflow soldering
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±45° Angle of half intensity
VSMY98545数据文档
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