STGW15H120F2

IGBT 晶体管 Trench gate field-stop IGBT, H series 1200 V, 15 A high speed

IGBT 沟槽型场截止 1200 V 30 A 259 W 通孔 TO-247

得捷:
IGBT H-SERIES 1200V 15A TO-247

贸泽:
IGBT 晶体管 Trench gate field-stop IGBT, H series 1200 V, 15 A high speed

艾睿:
This fast-switching STGW15H120F2 IGBT transistor from STMicroelectronics will be perfect in your circuit. Its maximum power dissipation is 259000 mW. It has a maximum collector emitter voltage of 1200 V. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. It is made in a single configuration. This device utilizes field stop|trench technology.

安富利:
Trans IGBT Chip N-CH 1200V 30A 3-Pin TO-247 Tube

Chip1Stop:
Trans IGBT Chip N-CH 1.2KV 30A 3-Pin3+Tab TO-247 Tube

Verical:
Trans IGBT Chip N-CH 1200V 30A 259000mW 3-Pin3+Tab TO-247 Tube

儒卓力:
**IGBT 1200V 15A 2,1V TO247-3 **