IXTA76P10T

IXTA76P10T概述

TO-263AA P-CH 100V 76A

表面贴装型 P 通道 76A(Tc) 298W(Tc) TO-263(IXTA)


得捷:
MOSFET P-CH 100V 76A TO263


艾睿:
As an alternative to traditional transistors, the IXTA76P10T power MOSFET from Ixys Corporation can be used to both amplify and switch electronic signals. Its maximum power dissipation is 298000 mW. This device utilizes trenchp technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.


Chip1Stop:
Trans MOSFET P-CH 100V 76A 3-Pin2+Tab TO-263AA


Verical:
Trans MOSFET P-CH 100V 76A 3-Pin2+Tab TO-263AA


DeviceMart:
MOSFET P-CH 100V 76A TO-263


IXTA76P10T数据文档
型号 品牌 下载
IXTA76P10T

IXYS Semiconductor

下载
IXTA88N085T7

IXYS Semiconductor

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IXTA80N10T7

IXYS Semiconductor

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IXTA220N04T2

IXYS Semiconductor

下载
IXTA200N085T

IXYS Semiconductor

下载
IXTA76P10T-TRL

IXYS Semiconductor

下载
IXTA120P065T T/R

IXYS Semiconductor

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IXTA220N055T

IXYS Semiconductor

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IXTA240N055T

IXYS Semiconductor

下载
IXTA160N075T7

IXYS Semiconductor

下载
IXTA200N075T

IXYS Semiconductor

下载

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