IPB065N03LGATMA1

晶体管, MOSFET, N沟道, 50 A, 30 V, 0.0054 ohm, 10 V, 1 V

The IPB065N03L G is an OptiMOS™ N-channel Power MOSFET sets new standards in power density and energy efficiency. It is tailored to the needs of power management by improved EMI behaviour, as well as increased battery life.

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Easy to design in

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Increased battery lifetime

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Improved EMI behaviour making external snubber networks obsolete

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Saving space

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Reducing power losses

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Optimized technology for DC-to-DC converters

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Qualified according to JEDEC for target applications

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Logic level

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Excellent gate charge x RDS ON product FOM

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Very low ON-resistance RDS ON

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Avalanche rated

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Halogen-free, Green device