STGD19N40LZ

IGBT 分立，STMicroelectronics### IGBT 分立件和模块，STMicroelectronics绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。

IGBT 分立，STMicroelectronics

得捷:
IGBT 20V 40A DPAK

欧时:
### IGBT 分立，STMicroelectronics### IGBT 分立件和模块，STMicroelectronics绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。

贸泽:
IGBT Transistors IGBT & Power Bipolar

艾睿:
This STGD19N40LZ IGBT transistor from STMicroelectronics is an electronic switch that can handle large currents with very little gate current drive. Its maximum power dissipation is 125000 mW. It has a maximum collector emitter voltage of 365 V. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. It is made in a single configuration.

安富利:
Trans IGBT Chip N-CH 425V 25A 3-Pin DPAK T/R

Chip1Stop:
Trans IGBT Chip N-CH 365V 25A 3-Pin2+Tab DPAK T/R

Verical:
Trans IGBT Chip N-CH 365V 25A 125000mW Automotive 3-Pin2+Tab DPAK T/R