DE375-102N12A

IXYS RF  DE375-102N12A  晶体管, 射频FET, 1 kV, 12 A, 940 W, 50 MHz, DE-375

RF Power MOSFET

♦ N-Channel Enhancement Mode

♦ Low Qgand Rg

♦ High dv/dt

♦ Nanosecond Switching

♦ 50MHz Maximum Frequency

Features

• Isolated Substrate

− high isolation voltage >2500V

− excellent thermal transfer

− Increased temperature and power cycling capability

• IXYS advanced low Qgprocess

• Low gate charge and capacitances

− easier to drive

− faster switching

• Low RDSon

• Very low insertion inductance <2nH

• No beryllium oxide BeO or other haz ardous materials

Advantages

• Optimized for RF and high speed switching at frequencies to 50MHz

• Easy to mountóno insulators needed

• High power density