MPSA42RL1G

MPSA42RL1G概述

ON SEMICONDUCTOR  MPSA42RL1G  单晶体管 双极, NPN, 300 V, 50 MHz, 625 mW, 50 mA, 25 hFE

Thanks to , your circuit can handle high levels of voltage using the NPN general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 625 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 6 V.

MPSA42RL1G数据文档
型号 品牌 下载
MPSA42RL1G

ON Semiconductor 安森美

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MPSA29

Fairchild 飞兆/仙童

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MPSA56

Fairchild 飞兆/仙童

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MPSA05RLRAG

ON Semiconductor 安森美

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MPSA06RL1G

ON Semiconductor 安森美

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MPSA56_D27Z

Fairchild 飞兆/仙童

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MPSA18RLRAG

ON Semiconductor 安森美

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MPSA56G

ON Semiconductor 安森美

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MPSA27RLRAG

ON Semiconductor 安森美

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MPSA64G

ON Semiconductor 安森美

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MPSA29G

ON Semiconductor 安森美

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