SSM6N04FU

SSM6N04FU 复合场效应管 20V 100mA/0.1A SOT-363/SC70-6/UF6 marking/标记 DC 高速开关

最大源漏极电压VdsDrain-Source Voltage| 20V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| 10V 最大漏极电流IdDrain Current| 100mA/0.1A 源漏极导通电阻RdsDrain-Source On-State Resistance| 1200mΩ@ VGS = 2.5V, ID = 10mA 开启电压Vgs（th）Gate-Source Threshold Voltage| 0.7~1.3V 耗散功率PdPower Dissipation| 200mW/0.2W Description & Applications| TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switch Applications ●With built-in gate-source resistor: RGS = 1 MΩ typ. ●2.5 V gate drive ●Low gate threshold voltage: Vth = 0.7~1.3 V ●Small package 描述与应用| 场效应晶体管的硅N沟道MOS类型 高速开关应用 ●借助内置的栅极 - 源极电阻器：RGS= 1MΩ（典型值） ●2.5 V门极驱动 ●低栅极阈值电压VTH =0.7〜1.3 V ●采用小型封装。