HMC8400

射频放大器 2-28 GHz LNA

Product Details

The is a gallium arsenide GaAs, pseudomorphic high electron mobility transistor pHEMT, monolithic microwave integrated circuit MMIC. The HMC8400 is a wideband low noise amplifier that operates between 2 GHz and 30 GHz. The amplifier provides 13.5 dB of gain, a 2 dB noise figure, 26.5 dBm output IP3, and 14.5 dBm of output power at 1 dB gain compres-sion, requiring 67 mA from a 5 V supply. The HMC8400 is self biased with only a single positive supply needed to achieve a drain current IDD of 67 mA. The HMC8400 also has a gain control option, VGG2\. The HMC8400 amplifier input/outputs are internally matched to 50 Ω and dc blocked, facilitating integration into multichip modules MCMs. All data is taken with the chip connected via two 0.025 mm 1 mil wire bonds of minimal length 0.31 mm 12 mils.

Applications

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Test instrumentation

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Microwave radios and very small aperture terminals VSATs

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Military and space

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Telecommunications infrastructure

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Fiber optics

### Features and Benefits

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Output power for 1 dB compression P1dB: 14.5 dBm typical

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Saturated output power PSAT: 17 dBm typical

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Gain: 13.5 dB typical

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Noise figure: 2 dB

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Output third-order intercept IP3: 26.5 dBm typical

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Supply voltage: 5 V at 67 mA

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50 Ω matched input/output

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Die size: 2.7 mm × 1.35 mm × 0.1 mm