ZXTP07012EFFTA

ZXTP07012EFFTA概述

12V, SOT23F, PNP medium power transistor

- 双极 BJT - 单 PNP 250MHz 表面贴装型 SOT-23F


得捷:
TRANS PNP 12V 4A SOT23F


立创商城:
PNP 12V 4A


艾睿:
The PNP ZXTP07012EFFTA general purpose bipolar junction transistor, developed by Diodes Zetex, is the perfect solution for your high-current density needs. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 2000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 12 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.


Allied Electronics:
Transistor PNP 12V 4A SOT23F


安富利:
Trans GP BJT PNP 12V 4A 3-Pin SOT-23F T/R


Chip1Stop:
Trans GP BJT PNP 12V 4A 3-Pin SOT-23F T/R


DeviceMart:
TRANS PNP MED PWR 12V SOT23F-3


Win Source:
TRANS PNP 12V 4A SOT23F-3


ZXTP07012EFFTA数据文档
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