PTFA192001EV4R0XTMA1

RF Power Field-Effect Transistor, 1Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, H-36260-2, 2Pin

Summary of Features:

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Broadband input and output matching

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Typical two-carrier WCDMA performance at 1990 MHz, 30 V

\- Average output power = 47 dBm

\- Linear Gain = 15.9 dB

\- Efficiency = 27%

\- IMD = -36 dBc

\- ACPR = -41 dBc

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Typical CW performance, 1960 MHz, 30 V

\- Output power at P1dB = 240 W

\- Efficiency = 57%

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Capable of handling 5:1 VSWR @ 30 V, 200 W CW output power

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Integrated ESD protection. Human Body Model, Class 2 minimum 

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Excellent thermal stability, low HCI drift

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Pb-free and RoHS compliant

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Package: H-362620-2, bolt-down